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Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.
SiC MOSFETs feature high power density, low reverse recovery charge and high switching frequency, with an operating temperature of up to 200°C. SiC MOSFETs boast excellent RDSon temperature stability, fast switching speed and high short-circuit robustness, which can meet the growing demands of high-power and high-voltage industrial applications, making them the preferred products for electric vehicle charging infrastructure, photovoltaic inverters and motor drives.
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