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Release time:2013-08-09
Read count:164
In August 2013, a research paper on the original Semi-Floating-Gate Transistor (SFGT) technology developed by Dongwei Semiconductor was published in the American journal Science.
This publication marked a major breakthrough by Chinese scientists in the field of core semiconductor technologies. Major media outlets including CCTV News and People’s Daily featured this achievement in their headlines, attracting significant attention from industry players both at home and abroad.



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