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Company Founded in 2008, the company has a registered capital of RMB 122,531,446. It was listed on the Sci-Tech Innovation Board (STAR Market) of the Shanghai Stock Exchange on February 10, 2022, with the stock code: 688261.
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Products

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The company's main products include the GreenMOS series of Super Junction MOSFETs, SFGMOS and FSMOS series of Shielded Gate MOSFETs, TGBT, SuperSi²C MOSFETs, SuperSi MOSFETs and SiC MOSFETs. These products are widely applicable to industrial and automotive-grade application scenarios, represented by new energy vehicle DC charging piles, on-board chargers (OBC), photovoltaic inverters, energy storage systems, 5G base station power supplies, telecom power supplies, data center server power supplies, industrial lighting power supplies, power tools, intelligent robots, unmanned aerial vehicles (UAV) and UPS power supplies. They are also used in consumer electronics applications such as PC power supplies, adapters, TV power boards, fast chargers for mobile phones and electromagnetic heating products.

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SJ MOSFETs

In order to meet the demand of high efficiency and minification of power supply system, Oriental Semiconductor has launched a new GreenMOS series of high voltage MOSFET, which adopts unique patented device structure and manufacturing process. GreenMOS product has faster switching speed and softer switching curve than conventional MOSFET, which can greatly restrain switch oscillation while obtaining extremely low dynamic loss. It can not only greatly improve system efficiency and reduce heating, but also simplify system EMI design.

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SGT MOSFETs

Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.

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IGBTs

Oriental Semiconductor's IGBT chips adopt a unique Trident-Gate Bipolar Transistor (TGBT) device structure to achieve lower on-state voltage drop and reduced switching losses.Multiple series of first and second-generation TGBT products have been successively launched, covering voltage ranges from 600V to 1700V. These products are suitable for applications such as photovoltaic energy storage inversion, DC charging piles, automotive main drive, OBC, and UPS. Additionally, Oriental has developed an ultra-high-speed series TGBT with an operating frequency of 60-100 kHz, which meets the demands of further high-frequency power systems while delivering higher efficiency.

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Trench MOSFETs

Trench MOSFET: Reliable and Trustworthy Performance Through extensive development,we continuously expand our product portfolio with advanced small signal MOS and power MOS solutions. Our comprehensive product portfolio provides the flexibility needed in today's market, easily choose the product that best suits for you. Our leading technology ensures the highest reliability and performance, while advanced packaging enhances resistance and thermal performance while reducing size and costs.

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Power Module

Advanced power modules, including IGBTs, MOSFETs, SiC, Si/SiC hybrid modules, diodes, SiC diodes, and intelligent power modules. IGBT modules are used in applications such as main drive and DC-AC class solar inverters, energy storage systems, uninterruptible power supplies, and motor drives. MOSFET modules are used in automotive motor drives and on-board charger applications, with voltage ratings of 40 V, 60 V, 80 V, and 650 V, and use super-junction technology and inductive resistors.

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SiC MOSFETs

Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.

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GaN HEMT

Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are increasingly becoming the choice for mainstream markets. For various high-voltage and low-voltage application scenarios, GaN HEMTs offer the fastest switching capabilities (with the highest dv/dt and di/dt) and superior energy efficiency performance. In addition, the self-developed GaN HEMTs by Oriental Semiconductor Co., Ltd. have reduced conduction losses and switching losses through innovative designs, further improving power density.

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Power IC

When connected in series with a power source, the OSP5050 high side OR-ing FET controller is used in conjunction with an external NMOSFET as an ideal diode rectifier. This OR-ing controller allows MOSFETs to replace diode rectifiers in distribution networks, thereby reducing power loss and voltage drop.

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Application
Application The products of Oriental Semiconductor cover a wide and specific range of application fields. In automotive electronics, the company has made in-depth deployment in electrification, covering on-board charging, various electronic control systems and thermal management. In the industrial and energy sectors, it provides solutions for battery testing, photovoltaic inversion and industrial power supplies. Meanwhile, its products also serve multiple key industries including consumer electronics (e.g., fast charging, televisions), household appliances (e.g., refrigerators, vacuum cleaners), communication facilities (e.g., data center power supplies) and motor drives (e.g., robots, UAVs, forklifts).
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Quality Management
Quality Management Date of Certification for ISO 9001 Quality Management System: January 11, 2016. Date of Certification for CNAS 17025 Laboratory Management System: March 3, 2025
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Investor Relations
Investor Relations Oriental Semiconductor is committed to establishing an effective communication mechanism with investors. Through transparent, timely and accurate information disclosure and communication, we help investors gain a comprehensive and objective understanding of the company’s strategies, operating status, financial performance and future development prospects. We ensure that all investors receive information of equal quality, build trusting relationships with them, and thereby enable the company’s intrinsic value to be reasonably reflected in the capital market.
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Stronger Synergies in Energy Storage!Oriental Semiconductor Wins “Best Innovation Award” from Deye Co., Ltd.Jointly Building a New Green Energy Ecosystem

Release time:2025-12-16

Read count:317

Recently, at the “Pooling Strength, Empowering the Future” 2026 Global Supplier Conference hosted by Deye Co., Ltd. (Stock Code: 605117.SH), Suzhou Oriental Semiconductor Co., Ltd. (hereinafter referred to as “Oriental Semiconductor”) was awarded the 2025 Best Innovation Award in recognition of its technological innovation and collaborative contributions in the field of power semiconductors.
This award marks another authoritative endorsement of the company’s market position in the power device track for new energy (energy storage). It also ushers its strategic cooperation with Deye Co., Ltd. into a new phase, with both parties set to jointly drive technological upgrading and global layout of the new energy industry.

Deye Co., Ltd. is a global leader in household energy storage inverters, accelerating its transformation from a traditional home appliance manufacturer to a new energy technology enterprise. In the first half of 2025, the revenue contribution of its new energy business (inverters + energy storage battery packs) reached an impressive 73.71%. The company has also invested 1.112 billion yuan in a production line with an annual output of 7 GWh for commercial and industrial energy storage systems. Its technical solutions, such as millisecond-level grid-connected/off-grid switching, hold a market share of over 55% in emerging markets.
As a leading enterprise in China’s power semiconductor sector, Suzhou Oriental Semiconductor Co., Ltd. has long been deeply engaged in the R&D and manufacturing of core products including Super Junction MOSFETs, TGBT series IGBTs and SiC MOSFETs. Leveraging its technological advantages of low on-resistance, high switching efficiency and high reliability, the company has established itself as a core power device supplier for Deye Co., Ltd.’s inverters and energy storage systems.

The collaborative innovation between the two parties has achieved a win-win situation featuring technological empowerment and strategic symbiosis.
At the product level, after Oriental Semiconductor’s flagship GreenMOS series was integrated into Deye’s photovoltaic inverters and energy storage systems, the energy conversion efficiency has been significantly improved, helping Deye reduce the total system cost. Products such as high-voltage Super Junction MOSFETs have also become a key support for the stable operation of Deye’s equipment.

In terms of technological linkage, relying on its original technology, Oriental Semiconductor has achieved industry-leading gate oxide reliability of SiC MOSFETs, which perfectly meets the application needs of Deye’s commercial and industrial energy storage systems under harsh working conditions such as high frequency and high temperature. Through joint R&D, the two parties have further optimized the power density and heat dissipation performance of energy storage systems, and jointly promoted the efficient implementation of 100kW to 2.5MW commercial and industrial energy storage solutions in a variety of application scenarios.

In market expansion, relying on Deye’s channel advantages in Asian, African and Latin American markets (covering more than 110 countries) and Oriental Semiconductor’s localized technological strength, the two parties jointly explore emerging markets such as the Middle East and Southeast Asia to avoid trade barriers.

This award stands as a powerful testament to the new stage reached in the strategic cooperation between the two parties. Going forward, Oriental Semiconductor will continue to leverage its technological innovation advantages and deepen collaboration with Deye Co., Ltd. With core power devices as the link, the two sides will jointly drive technological upgrading and global deployment of the new energy industry, consolidate the device foundation for green energy ecosystem construction, and co-create a new blueprint for cooperation in the new energy sector.

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Three Consecutive Wins on the Honor Roll! Oriental Semiconductor’s High-Voltage MOSFET Claims the “China Chip” Award, Adding a New Benchmark to Power Semiconductors 2025-12-22
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Oriental Semiconductor and ENKRIS SEMICONDUCTOR have joined hands to advance the R&D and application of 12-inch Gallium Nitride (GaN) power devices 2025-10-21
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Successfully Selected as a Constituent Stock of the SSE STAR Innovation Value Strategy Custom Index 2025-06-10
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Suzhou Headquarters

Address:Building 65, Southeast Zone, Suzhou Nano City,No. 99 Jinji Lake Avenue, Suzhou Industrial Park
Telephone:0512-62534962
Email:enquiry@orientalsemi.com

Shenzhen Application Support Center

Address:Room 1905, 19th Floor, Building A7, Chuangzhi Cloud City,Xili Sub-district, Nanshan District, Shenzhen
Telephone:0755-83229660
Email:robin.lu@orientalsemi.com

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SJ MOSFETs SGT MOSFETs IGBTs Trench MOSFETs Power Module SiC MOSFETs GaN HEMT Power IC
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Automotive Electronics Power Supplies for Data Center AIDC Consumer Electronics Industrial Applications Household Appliances Communication Technology Motor Drives Robotics
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