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The first impression of Oriental Super-Silicon 65W fast-charging DEMO is that its components are very compactly arranged and its volume is extremely small. At the same time, the design of this DEMO is also very aesthetically pleasing, being quite close to the PCBA of a finished charger.

The main body of the DEMO board is composed of three soldered PCBs. The bottom one serves as the main control PCB, with a transformer and output filter capacitors mounted on its front side. The PCB at the input end is mainly equipped with input filtering and rectifier circuits, while the output end features a small protocol board. As it is a DEMO (demonstration prototype), no potting compound has been applied between the components on the front side.

Oriental’s Super-Silicon 65W PD fast-charging charger adopts the Active-Clamp Flyback (ACF) topology. Viewed from the back of the PCB, the primary side is equipped with two high-voltage MOSFETs and two controllers; the secondary side is fitted with a synchronous rectification IC and a synchronous rectification MOSFET. It adopts optocoupler feedback, and there is a hollowed-out isolation design between the high-voltage side and the low-voltage side.

The UCC28780 primary-side controller from Texas Instruments (TI) operates at a frequency of up to 1 MHz, which is significantly higher than the frequency of common consumer switching power supplies. Meanwhile, it complies with increasingly stringent energy consumption and efficiency standards and incorporates a variety of built-in protection functions.

The OSS65R340JF, a high-voltage MOSFET from Oriental’s Super-Silicon series, boasts the ultra-low driving loss and switching loss that are typical of the Super-Silicon product line. Particularly when operating at a higher frequency of 400 kHz, it still maintains the same efficiency as gallium nitride (GaN) power devices. With extremely high efficiency, it can meet high energy efficiency requirements.

Specification Data of Oriental OSS65R340JF.

The other controller adopts ON Semiconductor’s NCP51530B, a 700V high-side and low-side driver with a 3.5A sourcing current and 3A sinking current driving capability, suitable for AC-DC power supplies and inverters. When operating at high frequencies, the NCP51530 delivers optimal propagation delay, low quiescent current, and low switching current. This chip is specifically designed for high-efficiency power supplies that operate at high frequencies. The NCP51530 is available in two versions: NCP51530A and NCP51530B. The NCP51530A features a typical propagation delay of 60 ns, while the NCP51530B has a typical propagation delay of 25 ns.

The other high-voltage MOSFET is Oriental’s OSG65R900DF, which adopts advanced GreenMOS technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, making it suitable for active power factor correction (APFC) and switching power supply applications.

Detailed Specification Data of Oriental OSG65R900DF.

Compared with Apple’s 30W charger, the Oriental Super – Silicon 65W PD fast – charging DEMO has doubled the power while featuring a smaller size.

Compared with Apple’s 61W charger, the volume of Oriental Super-Silicon 65W PD fast-charging DEMO is only about one-third of that.

How compact exactly is the Oriental Super-Silicon 65W PD fast-charging charger DEMO? A rough measurement of the bare board shows its dimensions are 51mm (length) × 39mm (width) × 23mm (height), with an overall volume of approximately 45.75 cm³. Converted, its power density reaches about 1.42W/cm³, which is quite high, and its size is comparable to that of the popular gallium nitride fast-charging products nowadays.

After learning about the appearance and structure of the Oriental Super-Silicon 65W PD fast-charging charger DEMO, ChargerLAB has also conducted performance tests on this product. Let’s move on to the test details of this solution.

2. Charging Compatibility Test

First, when using the Oriental Super-Silicon 65W Fast-Charging Charger DEMO board to charge an iPhone SE, the test shows a voltage of 8.96V, a current of 1.3A, and a power of approximately 11.7W. The device has successfully entered the USB PD fast-charging mode.

When charging an iPhone 11 Pro Max, the test shows a voltage of 8.92V, a current of 2.51A, and a power of approximately 22.47W, with the device successfully entering the USB PD fast-charging mode.

When charging a Samsung S10+, the test indicates a voltage of 8.95V, a current of 1.62A, and a power of approximately 14.54W, with the device successfully entering the USB PD fast-charging mode.

When charging a Xiaomi 9, the test shows a voltage of 8.95V, a current of 1.48A, and a power of approximately 13.26W, with the device successfully entering the USB PD fast-charging mode.

When charging an Apple MacBook Pro, the test shows a voltage of 19.95V, a current of 2.86A, and a power of approximately 57.23W, with the device having successfully entered the USB PD fast-charging mode.

When charging a 100W fast-charging power bank, the test shows a voltage of 19.95V, a current of 3.21A, and a power of approximately 64W, with the power bank successfully entering the USB PD fast-charging mode.

3. Efficiency Test

The main test equipment selected for this efficiency test includes the POWER-Z KM001C tester, Zhurui power meter, VICTOR 86E multimeter, and electronic load.

First, connect the Oriental 65W Super-Silicon DEMO board to the power meter, then connect the USB-C output port to the POWER-Z KM001C (which is used to induce a specified voltage) and enable constant current output via the electronic load. To obtain more accurate test data, a multimeter was used simultaneously during the test to measure the board-side voltage; additionally, the standby power consumption of the POWER-Z KM001C tester under different voltages was measured in advance. The results are shown in the table below:

The following data is based on a 230V AC input voltage, with output under five different full-load modes: 5V/3A, 9V/3A, 12V/3A, 15V/3A, and 20V/3.25A respectively:

In the 5V/3A load mode, the input power measured at the input terminal is 17.62W. After subtracting the 0.1W power consumption of the POWER-Z KM001C, the actual input power at the board terminal is approximately 17.52W. The multimeter measures that the output voltage at the board terminal of the Oriental 65W Super-Silicon DEMO is 5.14V with a current of 3A; through calculation, the output power at the board terminal is approximately 15.42W, and the board-terminal efficiency is approximately 88.01%.

In the 9V/3A load mode, the input power measured at the input terminal is 29.35W. After subtracting the 0.16W power consumption of the POWER-Z KM001C, the actual input power at the board terminal is approximately 29.19W. The multimeter measures that the output voltage at the board terminal is 9.02V with a current of 3A; through calculation, the output power at the board terminal is approximately 27.06W, and the board-terminal efficiency is approximately 92.70%.

In the 12V/3A load mode, the input power measured at the input terminal is 39.03W. After subtracting the 0.22W power consumption of the POWER-Z KM001C, the actual input power at the board terminal is approximately 38.81W. The multimeter measures that the output voltage at the board terminal is 12.03V; with a current of 3A (consistent with the load mode setting), the calculated output power at the board terminal is approximately 36.09W, and the board-terminal efficiency is approximately 92.99%.

In the 15V/3A load mode, the input power measured at the input terminal is 48.74W. After subtracting the 0.28W power consumption of the POWER-Z KM001C, the actual input power at the board terminal is approximately 48.46W. The multimeter measures that the output voltage at the board terminal is 15.05V; with a current of 3A (consistent with the 15V/3A load mode setting), the calculated output power at the board terminal is approximately 45.15W, and the board-terminal efficiency is approximately 93.17%.

In the 20V/3.25A load mode, the input power measured at the input terminal is 69.92W. After subtracting the 0.4W power consumption of the POWER-Z KM001C, the actual input power at the board terminal is approximately 69.52W. The multimeter measures that the output voltage at the board terminal is 20.07V with a current of 3.25A; through calculation, the output power at the board terminal is 65.23W, and the board-terminal efficiency is approximately 93.84%.

The test data shows that the board-terminal efficiency of the Oriental Super-Silicon 65W Fast-Charging Charger DEMO board is 88% in the 5V/3A mode. When switching to fast-charging modes with 9V or higher, the board-terminal efficiency remains around 93%, and reaches nearly 94% when outputting at the full 65W load under the 20V/3.25A mode.

4. Temperature Rise Test

In the Temperature Rise Test, the initial temperature of the Oriental Super-Silicon 65W PD Fast-Charging Charger DEMO board was measured first. Subsequently, load tests were conducted on the DEMO (equipped with Oriental Super-Silicon) under three of the most common output modes: 9V/2A (18W), 20V/2.25A (45W), and 20V/3.25A (65W). All three modes were operated with a load for 3 hours in an environment with a room temperature of 25°C; afterward, a FLIR thermal imager was used to detect the temperatures on the front and back sides of the DEMO board. The results are as follows:

The initial maximum temperature on the front side of the Oriental Super-Silicon 65W PD Fast-Charging Charger DEMO board is approximately 30.3°C, and the initial maximum temperature on the back side is approximately 29.2°C.

First, under the 9V/2A (18W) mode with a 3-hour load application, the FLIR thermal imager shows that the maximum temperature on the front side of the PCB board occurs at the transformer, reaching approximately 59.6°C. The maximum temperature on the back side of the board is approximately 53.6°C, with a maximum temperature rise of 29.3°C.

After operating with a load for 3 hours under the 20V/2.25A (45W) mode, the maximum temperature on the front side of the PCB board is approximately 87.3°C, the maximum temperature on the back side is approximately 76°C, and the maximum temperature rise reaches 57°C.

Finally, under the 20V/3.25A (65W) full-load condition for 3 hours, the measured maximum temperature on the front side is 95°C, the maximum temperature on the back side is 90.9°C, and the maximum temperature rise is 64.7°C.

Summary：

In recent years, consumer demand for fast-charging accessories with high power density has grown increasingly robust. High-power, high-density USB PD fast-charging power supplies have emerged as new favorites in the market, experiencing rapid development. Seizing this opportunity, Oriental Semiconductor has launched its Super-Silicon series MOSFETs, which boast a switching frequency of over 1 MHz—on par with gallium nitride (GaN) power devices. This technology enables high-power fast-charging products to achieve high power density at lower costs, enhancing their market competitiveness.

Oriental Semiconductor’s 65W PD fast-charging DEMO board, developed based on Super-Silicon technology, features compact size, high power output, and high efficiency. Tests conducted by ChargerLAB show that the bare board dimensions are only 51mm × 39mm × 23mm, with a power density of 1.42W/cm³—ranking among the leading levels in fast-charging solutions of the same power class.

Further testing reveals that this DEMO board supports the USB PD3.0 fast-charging standard. When charging mainstream devices such as the iPhone, Xiaomi 9, Samsung S20+, and MacBook Pro, it can normally enter the USB PD fast-charging state. In terms of efficiency, with a 230V AC input, the board-terminal efficiency can reach up to 94%—high efficiency effectively reduces heat generation. For temperature rise performance, without any auxiliary heat dissipation measures, the board demonstrates solid performance under three load modes: 18W, 45W, and 65W.

Currently, mass-produced high-power-density fast-charging solutions on the market are generally developed based on GaN power devices. While GaN solutions have gained wide consumer acceptance, their costs are relatively high. In contrast, Oriental’s Super-Silicon technology also delivers performance comparable to GaN fast chargers, including fast switching speeds, high power density, and high efficiency—making it a standout innovation.

As a technology-driven semiconductor company, Oriental Semiconductor has accumulated profound expertise in core semiconductor device technologies. It focuses on innovation in semiconductor device technology and holds multiple core patents in this field. It is understood that Oriental’s GreenMOS series products are among the earliest domestically mass-produced high-voltage super-junction products to enter industrial applications. Holding a leading position among domestic brands, these products are widely used in high-power application scenarios such as charging pile modules and communication power supplies.