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Release time:2016-12-30
Read count:319
Through Dedicated Independent R&D, Oriental Semiconductor Semiconductor’s SGT-MOS Entered Mass Production in December 2016
Adopting a semi-floating gate structure, the SGT-MOS integrates the advantages of power MOSFETs with traditional planar structures and SGT (Shielded Gate Trench) structures. It also boasts superior process stability and reliability, faster switching speed, smaller gate charge, and higher application efficiency. As such, it can be widely applied in fields including motor drives and synchronous rectification.



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