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Release time:2012-09-28
Read count:169
Through the Persistence and Unremitting Efforts of Oriental Semiconductor Semiconductor’s Team, the World’s First Semi-Floating-Gate Transistor (SFGT) Was Successfully Developed in September 2012
As a new type of foundational device, the Semi-Floating-Gate Transistor can be applied in the fields of SRAM (Static Random-Access Memory) and DRAM (Dynamic Random-Access Memory). It can also be used in Active Pixel Sensor (APS) chips: the new image sensor unit composed of a single Semi-Floating-Gate Transistor reduces the area by more than 20%. This increase in photosensitive unit density further enhances the resolution and sensitivity of image sensor chips.



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