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Faced with the exponential growth in AI computing demand, traditional data center power architectures are confronting unprecedented challenges. The kilowatt-level power supply standard can no longer meet the extreme energy consumption needs of AI models, and a revolutionary transformation will take place in the power supply methods of global data centers. At this critical juncture where power electronics and AI computing are deeply integrated, Suzhou Oriental Semiconductor Co., Ltd. (“Oriental Semiconductor”, Stock Code: 688261) and Suzhou ENKRIS SEMICONDUCTOR Co., Ltd. (“ENKRIS SEMICONDUCTOR”) jointly announced on October 17 that they have reached a strategic cooperation to jointly advance the R&D and application of 12-inch Gallium Nitride (GaN) technology and products.

Gallium Nitride (GaN) power devices are in a transitional phase, shifting from “single-point breakthrough” in consumer electronics fast charging to expansion across multiple fields. Over the next 2-3 years, demand in emerging sectors such as AI server power supplies, new energy vehicles, humanoid robots, photovoltaic inverters, and industrial power supplies will enter an accelerated growth stage. Particularly, the demand for AI data centers is becoming increasingly urgent—for instance, NVIDIA plans to fully deploy the 800V High-Voltage Direct Current (HVDC) architecture for its next-generation Rubin series by 2027. This new high-voltage direct current centralized power supply method highly relies on the support of high-performance power semiconductor materials, requiring silicon, silicon carbide (SiC), and GaN to provide end-to-end solutions for high-voltage direct current systems, covering power supply from the grid to chips. In particular, GaN-based multiphase DC/DC converter products offer flexible and efficient power systems for large-scale AI data centers. Meanwhile, GaN power devices will also enhance the motor drive performance of applications like humanoid robots and drones, providing energy-saving and high-efficiency drive solutions.
Oriental Semiconductor, a domestic innovator in power semiconductor technology, has partnered with ENKRIS SEMICONDUCTOR—a pioneer in GaN epitaxial material technology. Leveraging their respective strengths, the two companies are developing 12-inch silicon-based GaN HEMT transistors using mainstream 12-inch CMOS pilot lines, jointly advancing the industrialization of 12-inch silicon-based GaN power devices. The successful development of this industrial technology will not only significantly reduce manufacturing costs but also utilize advanced 12-inch front-end and back-end process technologies to fully unlock the potential of GaN materials in high energy efficiency and high power density. This will enable the technology to provide more cost-effective and high-performance solutions for the aforementioned application fields.

“Collaborative innovation” is the core keyword of this cooperation. Against the backdrop of rapid iterations in semiconductor technology, collaborative innovation among upstream and downstream enterprises in the industrial chain is particularly crucial. As an innovator in the power semiconductor field, Oriental Semiconductor has rich experience in device design and market application. ENKRIS SEMICONDUCTOR, with profound technical accumulation in GaN epitaxial materials, is the world’s first enterprise to master 12-inch silicon-based GaN epitaxial technology. The partnership between the two companies will bridge the key technical chain from materials to device processes, accelerating the industrialization of domestic GaN power devices. Both parties stated that through this cooperation, they will focus on solving key technical challenges of large-size GaN epitaxial materials in device manufacturing, including full-process technology development such as material-process matching optimization and reliability testing, to provide a complete solution for the domestic semiconductor industry.

Senior executives of both companies express full confidence in the cooperation prospects. They jointly believe that this cooperation will inject strong impetus into the improvement and upgrading of the domestic GaN industrial chain. The cooperation project will advance in phases: the initial stage will focus on building and optimizing basic epitaxial processes and device structure process platforms; the mid-term goal is to launch prototype products in specific application fields; in the long run, the two parties aim to establish a complete 12-inch GaN technology ecosystem, covering the entire industrial chain including materials, design, manufacturing, packaging and testing, and applications. This cooperation will combine Oriental Semiconductor’s rich experience in power device design and manufacturing with ENKRIS SEMICONDUCTOR’s leading technology in GaN epitaxial materials, achieving a strong alliance between upstream and downstream of the industrial chain. It will effectively promote 12-inch GaN technology to become one of the core technologies in the power electronics field in the near future, driving the high-quality development of China’s third-generation semiconductor industry.

Suzhou Oriental Semiconductor Co., Ltd. (Stock Code: 688261) has profound technical accumulation and extensive market experience in the power semiconductor device field. Its product portfolio covers high-voltage superjunction MOSFETs, medium-low voltage shielded-gate MOSFETs, super silicon MOSFETs, TGBTs, and SiC MOSFETs, demonstrating strong device R&D capabilities. These products have been widely applied in fields such as new energy vehicle charging piles, 5G base station power supplies, data centers, and computing server power supplies—markets that highly overlap with the potential application areas of 12-inch GaN, laying a market foundation for the future implementation of this technology. The company has expanded the production of products such as high-voltage superjunction MOSFETs from 8-inch foundries to 12-inch foundries, accumulating experience in the iteration and upgrading of 12-inch process platforms.

Suzhou ENKRIS SEMICONDUCTOR Co., Ltd. owns internationally advanced R&D and industrialization bases for gallium nitride (GaN) epitaxial materials. As a leading enterprise with intellectual property advantages in China’s semiconductor material sector, it is committed to providing high-quality GaN epitaxial material solutions for fields such as power electronics and microdisplay. It is also one of the very few pioneering manufacturers in the world currently capable of supplying 12-inch silicon-based GaN epitaxial products, with its technical strength ranking among the international leaders.