CompanyFounded in 2008, the company has a registered capital of RMB 122,531,446. It was listed on the Sci-Tech Innovation Board (STAR Market) of the Shanghai Stock Exchange on February 10, 2022, with the stock code: 688261.
The company's main products include the GreenMOS series of Super Junction MOSFETs, SFGMOS and FSMOS series of Shielded Gate MOSFETs, TGBT, SuperSi²C MOSFETs, SuperSi MOSFETs and SiC MOSFETs. These products are widely applicable to industrial and automotive-grade application scenarios, represented by new energy vehicle DC charging piles, on-board chargers (OBC), photovoltaic inverters, energy storage systems, 5G base station power supplies, telecom power supplies, data center server power supplies, industrial lighting power supplies, power tools, intelligent robots, unmanned aerial vehicles (UAV) and UPS power supplies. They are also used in consumer electronics applications such as PC power supplies, adapters, TV power boards, fast chargers for mobile phones and electromagnetic heating products.
In order to meet the demand of high efficiency and minification of power supply system, Oriental Semiconductor has launched a new GreenMOS series of high voltage MOSFET, which adopts unique patented device structure and manufacturing process. GreenMOS product has faster switching speed and softer switching curve than conventional MOSFET, which can greatly restrain switch oscillation while obtaining extremely low dynamic loss. It can not only greatly improve system efficiency and reduce heating, but also simplify system EMI design.
Oriental Semiconductor’s SFGMOS Series MOSFET adopts Semi-Floating Gate structure, which combines the advantages of traditional planar structure and SGT structure of power MOSFET, and has the advantages of higher process stability and reliability, faster switching speed, smaller gate charge and higher application efficiency. SFGMOS Series MOSFET products cover the whole series of 20V~200V, which can be widely used in motor driver, synchronous rectification, etc.
Oriental Semiconductor's IGBT chips adopt a unique Trident-Gate Bipolar Transistor (TGBT) device structure to achieve lower on-state voltage drop and reduced switching losses.Multiple series of first and second-generation TGBT products have been successively launched, covering voltage ranges from 600V to 1700V. These products are suitable for applications such as photovoltaic energy storage inversion, DC charging piles, automotive main drive, OBC, and UPS. Additionally, Oriental has developed an ultra-high-speed series TGBT with an operating frequency of 60-100 kHz, which meets the demands of further high-frequency power systems while delivering higher efficiency.
Trench MOSFET: Reliable and Trustworthy Performance Through extensive development,we continuously expand our product portfolio with advanced small signal MOS and power MOS solutions. Our comprehensive product portfolio provides the flexibility needed in today's market, easily choose the product that best suits for you. Our leading technology ensures the highest reliability and performance, while advanced packaging enhances resistance and thermal performance while reducing size and costs.
Advanced power modules, including IGBTs, MOSFETs, SiC, Si/SiC hybrid modules, diodes, SiC diodes, and intelligent power modules. IGBT modules are used in applications such as main drive and DC-AC class solar inverters, energy storage systems, uninterruptible power supplies, and motor drives. MOSFET modules are used in automotive motor drives and on-board charger applications, with voltage ratings of 40 V, 60 V, 80 V, and 650 V, and use super-junction technology and inductive resistors.
Third-generation semiconductor material power devices are one of the important components of high-performance power devices in the future. The R&D team of Oriental has rich experience in wide bandgap semiconductor research and has developed a series of SiC MOSFETs.
Gallium Nitride High Electron Mobility Transistors (GaN HEMT) are increasingly becoming the choice for mainstream markets. For various high-voltage and low-voltage application scenarios, GaN HEMTs offer the fastest switching capabilities (with the highest dv/dt and di/dt) and superior energy efficiency performance. In addition, the self-developed GaN HEMTs by Oriental Semiconductor Co., Ltd. have reduced conduction losses and switching losses through innovative designs, further improving power density.
When connected in series with a power source, the OSP5050 high side OR-ing FET controller is used in conjunction with an external NMOSFET as an ideal diode rectifier. This OR-ing controller allows MOSFETs to replace diode rectifiers in distribution networks, thereby reducing power loss and voltage drop.
ApplicationThe products of Oriental Semiconductor cover a wide and specific range of application fields. In automotive electronics, the company has made in-depth deployment in electrification, covering on-board charging, various electronic control systems and thermal management. In the industrial and energy sectors, it provides solutions for battery testing, photovoltaic inversion and industrial power supplies. Meanwhile, its products also serve multiple key industries including consumer electronics (e.g., fast charging, televisions), household appliances (e.g., refrigerators, vacuum cleaners), communication facilities (e.g., data center power supplies) and motor drives (e.g., robots, UAVs, forklifts).
Quality ManagementDate of Certification for ISO 9001 Quality Management System: January 11, 2016. Date of Certification for CNAS 17025 Laboratory Management System: March 3, 2025
Investor RelationsOriental Semiconductor is committed to establishing an effective communication mechanism with investors. Through transparent, timely and accurate information disclosure and communication, we help investors gain a comprehensive and objective understanding of the company’s strategies, operating status, financial performance and future development prospects. We ensure that all investors receive information of equal quality, build trusting relationships with them, and thereby enable the company’s intrinsic value to be reasonably reflected in the capital market.
Mr. Gong Yi was born in June 1976. He is of Chinese nationality and holds no permanent right of residence abroad. He holds a master's degree and is fully responsible for the overall management of the company.
He previously served as an engineer in the Engineering Department at Advanced Micro Devices, Inc. (AMD) in the United States, and as a technical specialist at Infineon Technologies AG in Germany.
Wang Pengfei
Director & Chief Technology Officer (CTO)
Mr. Wang Pengfei was born in February 1976. He is of Chinese nationality and holds no permanent right of residence abroad. He holds a doctoral degree and takes charge of the company’s technological and product development work.
His previous work experience includes serving as an R&D Engineer at the R&D Center of Infineon Technologies AG in Germany, an R&D Engineer in the Technology Innovation and Integration Department of Qimonda AG in Germany, and a Professor at the School of Microelectronics, Fudan University.
Lu Wansong
Director & Deputy General Manager
Mr. Lu Wansong was born in March 1975. He is of Chinese nationality and holds no permanent right of residence abroad. He holds a master's degree and is responsible for the company’s business development and marketing management.
His previous roles include Purchasing Manager in the Purchasing Department at Teradyne (Shanghai) Co., Ltd., Purchasing Manager in the Purchasing Department at Schneider Electric Automation Control Systems (Shanghai) Co., Ltd., and Global Purchasing Manager in the Purchasing Department at Honeywell (China) Co., Ltd.
Li Lin
Director & Board Secretary
Ms. Li Lin was born in August 1981. She is of Chinese nationality and holds no permanent right of residence abroad. She holds a bachelor's degree and is responsible for the company's board-related affairs and securities market-related work.
Xie Changyong
Chief Financial Officer (CFO)
Mr. Xie Changyong was born in March 1981. He is of Chinese nationality and holds no permanent right of residence abroad. He holds a bachelor's degree and is responsible for the company's financial-related work.
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